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| INTEGRATED CIRCUITS SA2410 2.45GHz RF power amplifier and T/R switch Preliminary specification IC17 Data Handbook 1997 Sep 09 Philips Semiconductors Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 DESCRIPTION The SA2410 is a GaAs monolithic power amplifier with an integrated T/R switch designed to meet requirements for 802.11 (WLAN). The SA2410 uses an on-chip 4 GHz oscillator to generate the negative bias, thus eliminating the need for a negative supply. It operates from 3V to 5.5V and consumes 125 mA with an output power of 18.5 dB (typ). It is suitable for other 2.45 GHz ISM band applications. PAIN GND GND GND GND GND GND 26 32 31 30 29 28 2 25 24 VD4 GND VD3 GND VGC1 VGC2 GND SWOUT1 1 23 2 3 4 5 6 7 8 9 VCTRL1 10 VSW 11 SWIN 12 GND 13 GND 14 V OSC 19 VCTRL2 16 SWOUT2 26 21 20 19 18 17 GND GND GND GND VGPA VNEG PAOUT GND V D2 FEATURES * VCC=3V-5.5V * No negative bias needed * ICC=125mA (typ) @ 3.3V * POUT=18.5 dB(typ) IM3<-30dBc IM5<-50dBc * Gain=29dB (typ) * Attenuation range=16dB (typ) * LQFP-32 package APPLICATIONS SR01422 Figure 1. Pin Configuration * 802.11 WLAN * 2.4-2.5 GHz ISM BAND ORDERING INFORMATION DESCRIPTION 32-Pin Plastic Thin Quad Flat Package TEMPERATURE RANGE -40 C+85C ORDER CODE SA2410 DWG # SOT401-1 GENERAL SPECIFICATIONS Symbol T VCC ICC Power Amplifier fRF IM3 IM5 Ton Toff Gain Pout Eff. Gt1 Gt2 Gr Gvd Frequency Range IM3 2 tones IM5 2 tones Transmit power on Xmit power down Small signal gain Output power Efficiency Gain variation with temp Gain variation with temp Ripple Gain variation with supply -40 to +85C 0-70C 2.45"0.05 GHz 3.3 volts"0.3 V IM3=30dBc IM5=50dBc 125mA@3.3 volts 17.5 29 18.5 25 "3.5 "2.0 "1 0.5 Including neg. supply 2.4 30 50 2 2 2.5 GHz dBc dBc s s dB dBm % dB dB dB dB Supply V Supply I 3.3 volts Parameter Temperature Condition Min -40 3 125 Typ Max +85 5.5 Unit C V mA 1997 Sep 09 2 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 Symbol ton Linear Gain Control Symbol VGC CGC GCR Symbol Ltx Lrx tsw ISOPA Zin Zout ISOSW Parameter Power on time 4 GHz spur Parameter Gain control voltage Input C at gain pin Attenuation range Parameter Insertion loss Tx Insertion loss Rx Switch response time Isolation switch to PA Input impedance Output impedance Switch Isolation Condition Min 10 Typ Max 100 Unit nS dBm Negative voltage supply Xmit Mode Condition Min TBD Typ TBD TBD 16 Condition Min Typ 1.3 1.3 30 50 50 17 19 Max 2 2 400 Max Unit Volt pF dB Unit dB dB nS dB dB Transmit/receive switch Attenuator PA PAIN PAOUT VGPA VNEG Negative Power Supply SWOUT1 Switch SWOUT2 SWIN SR01423 Figure 2. Block Diagram 1997 Sep 09 3 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm SOT401-1 1997 Sep 09 4 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 NOTES 1997 Sep 09 5 Philips Semiconductors Preliminary specification 2.45GHz RF power amplifier and T/R switch SA2410 DEFINITIONS Data Sheet Identification Objective Specification Product Status Formative or in Design Definition This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Preliminary Specification Preproduction Product Product Specification Full Production Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1996 All rights reserved. Printed in U.S.A. Date of release: 09-97 Document order number: 9397 750 03299 Philips Semiconductors 1997 Sep 09 6 |
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